Vertical Graphene Base Transistor
Wolfgang Mehr, J. Christoph Scheytt, Jarek Dabrowski, Gunther Lippert,, Ya-Hong Xie, Max C. Lemme, Mikael Ostling, Grzegorz Lupina
TL;DR
This paper introduces a graphene-based hot electron transistor with high-frequency potential, demonstrating high current ratios and gain through simulations, and proposing a materials solution compatible with existing semiconductor processes.
Contribution
It presents a novel graphene-based transistor concept with simulation-backed high-frequency performance and a compatible materials solution.
Findings
High current on/off ratios demonstrated in simulations
Potential for THz operation indicated by models
Materials solution compatible with SiGe processes proposed
Abstract
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.
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