MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

TL;DR

This paper reports the successful integration of atomic-layer-deposited high-k Al2O3 dielectric on MoS2 crystals to create dual-gate MOSFETs with high mobility and on/off ratios, demonstrating promising performance for 2D electronics.

Contribution

It introduces a novel fabrication of MoS2 dual-gate MOSFETs with ALD Al2O3 as the top-gate dielectric, achieving high mobility and current ratios.

Findings

Maximum drain current of 7.07mA/mm with back-gate control

Highest electron mobility of 517 cm^2/Vs

On/off current ratio exceeds 10^8

Abstract

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 {\mu}m, a channel length of 9 {\mu}m, and a top-gate length of 3 {\mu}m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm^2/Vs. The highest current on/off ratio is over 10^8.