Intrinsic origin of the two-dimensional electron gas at polar oxide interfaces
M. L. Reinle-Schmitt, C. Cancellieri, D. Li, D. Fontaine, M. Medarde,, E. Pomjakushina, C. W. Schneider, S. Gariglio, Ph. Ghosez, J.-M. Triscone,, and P. R. Willmott

TL;DR
This paper demonstrates that the intrinsic polar catastrophe mechanism causes the formation of a two-dimensional electron gas at polar oxide interfaces, with conductivity emerging after a critical film thickness related to the built-in electric field.
Contribution
It provides conclusive evidence that the polar-catastrophe model explains the intrinsic origin of doping at polar oxide interfaces, supported by experimental scaling with film thickness and electric field.
Findings
Conductivity appears above a critical thickness proportional to the electric field.
The critical thickness scales with the strength of the built-in electric field.
Results confirm the polar-catastrophe model as the intrinsic doping mechanism.
Abstract
The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO)(SrTiO) (LASTO:x) grown on (001) SrTiO were investigated as a function of film thickness and . The films are insulating for the thinnest layers, but above a critical thickness, , the interface exhibits a constant finite conductivity which depends in a predictable manner on . It is shown that scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polar-catastrophe model as the intrinsic origin of the doping at this polar oxide interface.
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor materials and devices
