Electron temperature in electrically isolated Si double quantum dots

TL;DR

This paper investigates the electron temperature in electrically isolated silicon double quantum dots, demonstrating reduced effective electron temperature compared to leads, which is promising for long-coherence quantum computing.

Contribution

It provides the first measurement of electron temperature in electrically isolated silicon double quantum dots, showing reduced temperature and potential for quantum computation.

Findings

Effective electron temperature is significantly lower than lead temperature.

Capacitively coupled single-electron tunnelling detects charge transitions.

Isolated DQDs are promising for long-coherence quantum computing.

Abstract

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.