High-frequency performance of graphene field effect transistors with saturating IV-characteristics

TL;DR

This paper investigates the high-frequency performance of graphene FETs with boron-nitride dielectrics, demonstrating fmax up to 34 GHz and analyzing bias effects and ambipolar channel impacts.

Contribution

It provides new insights into the RF performance of GFETs with saturating IV characteristics and explores the influence of bias and ambipolar conduction.

Findings

fmax reaches 34 GHz at 600 nm channel length

Bias dependence significantly affects fT and fmax

Ambipolar channel impacts transconductance and output resistance

Abstract

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.