Spintronic devices on the base of magnetic nanostructures

TL;DR

This paper investigates spintronic devices based on magnetic nanostructures with cobalt nanoparticles on GaAs, demonstrating magnetic sensors and field-effect transistors with significant magnetic field effects on electron mobility.

Contribution

It introduces novel spintronic devices utilizing SiO2(Co) nanostructures on GaAs, analyzing their magnetic and electronic behaviors under magnetic fields.

Findings

Magnetic sensors based on injection magnetoresistance effect show avalanche suppression.

Magnetic field significantly alters electron mobility in the FET channel.

Interaction between Co nanoparticle spins and electron spins is key to device operation.

Abstract

Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the channel due to the interaction between spins of Co nanoparticles and electron spins.