Sixteen-state magnetic memory based on the extraordinary Hall effect
A. Segal, M. Karpovski, and A. Gerber

TL;DR
This paper demonstrates a novel multi-level magnetic memory using the extraordinary Hall effect for reading, achieving four, eight, and sixteen-state cells, advancing magnetic storage technology.
Contribution
It introduces a split-cell magnetic storage concept with multi-level ferromagnetic dots and validates the approach through experimental realization of multi-state cells.
Findings
Successful demonstration of four-, eight-, and sixteen-state magnetic cells.
Use of the extraordinary Hall effect enables reliable data reading.
Proof-of-concept supports potential for high-density magnetic memory.
Abstract
We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells.
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