Modified Mott-Schottky Analysis of Nanocrystal Solar Cells

TL;DR

This paper adapts Mott-Schottky analysis to accurately determine the built-in bias and doping density in nanocrystal solar cells by accounting for charge injection barriers that distort traditional measurements.

Contribution

It introduces a modified Mott-Schottky method that includes a constant capacitance to correct for charge injection barriers in nanocrystal solar cells.

Findings

Charge injection barriers cause distortions in Mott-Schottky analysis.

Incorporating a constant capacitance improves accuracy of Vbi and N measurements.

Modified analysis yields more reliable characterization of nanocrystal solar cells.

Abstract

Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes create a constant capacitance that distorts the junction's depletion capacitance and result in erroneous Vbi and N values when determined through Mott-Schottky analysis. The injection barrier capacitance is taken into account by incorporating a constant capacitance in parallel with the depletion capacitance.