Magnetically induced pumping and memory storage in quantum rings
Michele Cini, Enrico Perfetto

TL;DR
This paper demonstrates how quantum rings can be used for magnetic pumping and memory storage by controlling currents with magnetic flux protocols, showing potential for quantum device applications.
Contribution
It introduces a novel method for nonadiabatic charge pumping and proposes a quantum ring setup for efficient memory operations.
Findings
Single-parameter nonadiabatic pumping is achievable.
Arbitrary charge transfer can be controlled via flux protocols.
Proposed setup enables efficient writing and erasing in quantum memory.
Abstract
Nanoscopic rings pierced by external magnetic fields and asymmetrically connected to wires behave in sharp contrast with classical expectations. By studying the real-time evolution of tight-binding models in different geometries, we show that the creation of a magnetic dipole by a bias-induced current is a process that can be reversed: connected rings excited by an internal ac flux produce ballistic currents in the external wires. In particular we point out that, by employing suitable flux protocols, single-parameter nonadiabatic pumping can be achieved, and an arbitrary amount of charge can be transferred from one side to the other. We also propose a set up that could serve a memory device, in which both the operations of {\it writing} and {\it erasing} can be efficiently performed.
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