Critical Behavior of a Strongly Interacting 2D Electron System
A. Mokashi, S. Li, Bo Wen, S. V. Kravchenko, A. A. Shashkin, V. T., Dolgopolov, and M. P. Sarachik

TL;DR
The paper presents evidence of a critical transition in a strongly interacting 2D electron system in silicon, marked by a divergence in thermopower at a finite density, indicating a phase change driven by electron interactions.
Contribution
It demonstrates a critical behavior in thermopower indicating a phase transition in a low-disorder 2D electron system, with a critical density independent of disorder.
Findings
Thermopower diverges at a finite density $n_t$
Critical form $(-T/S) o (n_s - n_t)^x$ with $x oughly 1$
Evidence for an interaction-driven phase transition
Abstract
With decreasing density the thermopower of a low-disorder 2D electron system in silicon is found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density consistent with the critical form with ( is the temperature). Our results provide clear evidence for an interaction-induced transition to a new phase at low density in a strongly-interacting 2D electron system.
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