Scaling of the anomalous Hall effect in SrRuO$_{3}$

TL;DR

This study investigates the anomalous Hall effect in SrRuO$_{3}$ thin films, revealing a resistivity-dependent behavior and contributions from intrinsic and extrinsic mechanisms across the ferromagnetic phase.

Contribution

It demonstrates a comprehensive scaling of the anomalous Hall coefficient with resistivity and clarifies the roles of intrinsic and extrinsic mechanisms in SrRuO$_{3}$.

Findings

$R_{s}$ scales with $ ho_{xx}^2$ at low temperatures.

$R_{s}$ peaks and changes sign near $T_{c}$.

Behavior attributed to side jumps and Berry phase mechanisms.

Abstract

We measure the anomalous Hall effect (AHE) resistivity $\rho_{xy}$ in thin films of the itinerant ferromagnet SrRuO$_{3}$. At low temperatures, the AHE coefficient $R_{s}$ varies with $\rho_{xx}^2$, and at higher temperatures, $R_{s}$ reaches a peak and then changes sign just below $T_{c}$. We find that for all films studied $R_{s}$ scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism including the effect of finite scattering rates.