Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio

TL;DR

This paper reports the fabrication of in-situ CCVD-grown graphene transistors directly on silicon substrates, achieving ultra-high on/off-current ratios and CMOS compatibility, enabling low-cost integration into nanoelectronic systems.

Contribution

It introduces a CMOS-compatible process for in-situ growth of graphene transistors with record high on/off ratios, eliminating transfer steps.

Findings

Bilayer graphene transistors show on/off ratios up to 10^7.

In-situ growth enables direct fabrication on silicon substrates.

The process is compatible with existing CMOS technology.

Abstract

By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment.