Energy dissipation and switching delay in stress-induced switching of multiferroic devices in the presence of thermal fluctuations

TL;DR

This paper demonstrates that stress-induced switching of multiferroic nanomagnets can be achieved with near 100% probability in under 1 nanosecond at room temperature, dissipating less than 2 attojoules, highlighting its potential for ultra-low-energy computing.

Contribution

It provides a stochastic modeling analysis showing room-temperature, high-probability, ultra-low-energy switching in multiferroic nanomagnets, extending prior zero-temperature results.

Findings

Switching probability approaches 100% at room temperature.

Energy dissipation remains below 2 attojoules during switching.

Switching delay can be less than 1 nanosecond.

Abstract

Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy ($<$ 1 aJ for a switching time of $\sim$0.5 ns) at 0 K temperature. Here, we show by solving the stochastic Landau-Lifshitz-Gilbert equation that switching can be carried out with $\sim$100% probability in less than 1 ns while dissipating less than 2 aJ at {\it room temperature}. This makes nanomagnetic logic and memory systems, predicated on stress-induced magnetic reversal, one of the most energy-efficient computing hardware extant. We also study the dependence of energy dissipation, switching delay, and the critical stress needed to switch, on the rate at which stress is ramped up or down.