Room temperature ballistic transport in InSb quantum well nanodevices

TL;DR

This paper demonstrates room temperature ballistic electron transport in InSb quantum well nanodevices, showing potential for practical high-speed electronic applications through effective fabrication techniques.

Contribution

It reports the first clear observation of room temperature ballistic transport in InSb quantum wells using a novel growth-buffer scheme.

Findings

Negative bend resistance observed at 295 K

Ballistic transport at current densities over 10^6 A/cm^2

Effective growth and processing enable room temperature ballistic effects

Abstract

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.