A hybrid double-dot in silicon
M. Fernando Gonzalez-Zalba, Dominik Heiss, Andrew J. Ferguson
TL;DR
This paper presents electrical measurements and characterization of a hybrid double-dot system in silicon, involving a single arsenic dopant and a SET, demonstrating tunable electrostatic coupling.
Contribution
It introduces a hybrid double-dot system in silicon with detailed electrical characterization and tunable coupling, supported by simulations.
Findings
Observation of triple points in the hybrid double dot
Successful tuning of electrostatic coupling
Electrical characterization of single dopant in silicon
Abstract
We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.
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