Dopant metrology in advanced FinFETs

TL;DR

This paper introduces a novel atomistic impurity metrology method for ultra-scaled FinFETs, correlating experimental data with advanced simulations to identify impurity characteristics and improve device understanding.

Contribution

It presents a new approach that models excited states in simulations to accurately identify impurity species, concentration, and position in FinFETs.

Findings

Successful correlation of experimental data with simulations

Identification of impurity species and concentration

Demonstration of a new atomistic metrology approach

Abstract

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.