Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy

TL;DR

This study uses atomic force microscopy to analyze surface structures of high-quality (Ga,Mn)As and (Ga,Mn)(As,P) samples, revealing periodic ripples with a consistent orientation and measurable periodicity and amplitude.

Contribution

It provides detailed characterization of surface ripples on (Ga,Mn)As using Fourier analysis, highlighting their periodicity and orientation across various sample compositions.

Findings

Presence of periodic ripples aligned along [1-10] direction

Estimated ripple period of approximately 50 nm

Ripple amplitude characterized through Fourier analysis

Abstract

Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples have been investigated. All these samples have shown the presence of periodic ripples aligned along the $[1\bar{1}0]$ direction. From a detailed Fourier analysis we have estimated the period (~50 nm) and the amplitude of these structures.