Monte Carlo simulation of spin relaxation in nanowires and 2-D channels of II-VI semiconductors

TL;DR

This paper uses Monte Carlo simulations to analyze spin relaxation in II-VI semiconductor nanowires and 2-D channels, revealing that nanowires have significantly longer spin relaxation lengths than 2-D channels.

Contribution

It introduces a semi-classical Monte Carlo simulation approach to compare spin relaxation mechanisms in nanowires and 2-D channels of II-VI semiconductors, highlighting the impact of geometry on spin dephasing.

Findings

Spin relaxation length in nanowires exceeds that in 2-D channels.

D'yakanov-Perel and Elliot-Yafet are dominant mechanisms.

External field influences spin relaxation length.

Abstract

We have analysed spin relaxation behaviour of various II-VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semi-classical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet mechanism are dominant for spin relaxation in II-VI semiconductors. Variation in spin relaxation length with external field has been analysed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II-VI semiconductors are compared at an external field of 1kV/cm to understand the predominant factors affecting spin de-phasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.