Monte Carlo simulation of spin polarized transport in nanowires and 2-D channels of III-V semiconductors

TL;DR

This paper uses Monte Carlo simulations to study spin-polarized electron transport and relaxation mechanisms in III-V nanowires and 2D channels, revealing differences in spin dephasing lengths.

Contribution

It provides a comparative analysis of spin relaxation lengths in nanowires and 2D channels of III-V semiconductors under various conditions using semi-classical Monte Carlo methods.

Findings

Spin dephasing length is greater in nanowires than in 2D channels.

Spin relaxation is influenced by D'yakonov-Perel and Elliott-Yafet mechanisms.

Material properties and external conditions affect spin relaxation lengths.

Abstract

We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende materials at various conditions, such as, temperature, external field etc. Spin dephasing in III-V channels is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. Spin dephasing length in nanowire is found to be greater than that in 2-D channel.