On two-dimensional exciton bound by distant ionized-donor in a narrow quantum well
Marcin Tytus, Wojciech Donderowicz, Lucjan Jacak

TL;DR
This paper theoretically investigates the ground state energy of a two-dimensional exciton bound by a distant ionized donor in a narrow quantum well, considering various physical parameters affecting its stability.
Contribution
It introduces a detailed theoretical analysis of how the donor distance, mass ratio, magnetic field, and dielectric environment influence exciton binding in quantum wells.
Findings
Exciton binding energy varies with donor distance and material parameters.
Magnetic field enhances exciton stability in the quantum well.
Dielectric constant impacts the binding energy and stability of the exciton.
Abstract
The ground state energy of exciton bound by distant ionized donor impurity in two-dimensional semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The influence of the distance between QW plane and ionized donor, as well as of the electron-hole mass ratio, the magnetic field aligned across the QW plane and dielectric constant of the barrier material on the stability of exciton bound by ionized donor impurity is analyzed and discussed.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
