Exciton bound by distant ionized donor in two-dimensional GaAs/AlGaAs quantum well

TL;DR

This paper theoretically investigates how the binding energy of an exciton in a GaAs/AlGaAs quantum well is affected by the position of a distant ionized donor, magnetic fields, and dielectric properties.

Contribution

It introduces a detailed Hartree approach analysis of exciton binding in quantum wells considering various physical parameters and their effects.

Findings

Binding energy varies with donor distance and magnetic field strength.

Dissociation conditions depend on dielectric constant and impurity position.

The study provides insights into impurity effects on excitonic stability in quantum wells.

Abstract

The ground state energy of exciton bound by distant ionized donor impurity in quasi-two-dimensional GaAs/AlGaAs semiconductor quantum well (QW) is studied theoretically within the Hartree approach in the effective mass approximation. The influence of the distance between QW plane and ionized donor, as well as of the magnetic field aligned across the QW plane and varying dielectric constant of the barrier material on the stability of exciton bound by ionized donor impurity is analyzed and discussed.