Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

TL;DR

This study characterizes a thin, fully-depleted SOI pixel sensor designed for soft X-ray detection, evaluating its response across a range of energies using fluorescence radiation at a synchrotron source.

Contribution

It introduces a novel back-illuminated, thinned SOI pixel sensor with a phosphor contact layer, and provides detailed response characterization to soft X-ray energies.

Findings

Sensor effectively detects X-rays from 2.12 to 8.6 keV.

High-resistivity substrate improves X-ray response.

Back-plane phosphor layer enhances detection efficiency.

Abstract

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.