Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe

TL;DR

This study uses Monte Carlo simulations to analyze the magnetic resistivity of MnTe, an antiferromagnetic semiconductor, and finds results that align well with experimental data near its Néel temperature.

Contribution

It introduces a Monte Carlo simulation approach to model spin resistivity in MnTe, considering interactions between itinerant and lattice spins, providing insights into its magnetic properties.

Findings

Good agreement with experimental spin resistivity data

Resistivity peaks near the Néel temperature

Validates Monte Carlo method for magnetic semiconductors

Abstract

We investigate in this paper properties of the spin resistivity in the magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with the N\'eel temperature around 310K. Due to this high N\'eel temperature, there are many applications using its magnetic properties. The method we use here is the Monte Carlo simulation in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the N\'eel temperature.