Proposal for a Datta-Das transistor in the quantum Hall regime

TL;DR

This paper introduces a quantum Hall regime spin transistor utilizing resonant spin-field effects in chiral edge states with Rashba interaction, promising robust, all-electrical spin control.

Contribution

It presents the first quantum Hall version of the Datta-Das spin-field effect transistor with a resonant, electrically controlled spin manipulation mechanism.

Findings

Achieves strong resonant spin control with periodic gate arrays.

Ensures robustness against disorder due to adiabatic edge states.

Enables full spin readout via separate edge state contacts.

Abstract

We propose a resonant spin-field-effect transistor for chiral spin-resolved edge states in the integer quantum Hall effect with Rashba spin-orbit interaction. It employs a periodic array of voltage-controlled top gates that locally modulate the Rashba spin-orbit interaction. Strong resonant spin-field effect is achieved when the array periodicity matches the inverse of the wave-vector difference of the two chiral states involved. Well-known techniques of separately contacting the edge states make it possible to selectively populate and read out the edge states, allowing full spin readout. The resonant nature of the spin-field effect and the adiabatic character of the edge states guarantee a high degree of robustness with respect to disorder. Our device represents the quantum Hall version of the all-electrical Datta-Das spin-field effect transistor.