The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

TL;DR

This paper investigates how anisotropic gate potentials influence the phonon-induced spin-flip rate in GaAs quantum dots, revealing that anisotropy enhances spin-flip rates and allows electric field control via spin-orbit coupling, which is relevant for quantum computing.

Contribution

It demonstrates the effect of anisotropic gate potentials on spin-flip rates and electric tunability in GaAs quantum dots, highlighting potential for quantum computer development.

Findings

Anisotropic gate potential increases the spin-flip rate.

Electric field tunability is achieved through Dresselhaus spin-orbit coupling.

Level crossing point shifts to lower quantum dot radius.

Abstract

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower quantum dot radius due to the suppression of the Land$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$ V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating phonon induced spin-flip rate through spin-orbit coupling with the application of anisotropic gate potential in a regime where the g-factor changes its sign.