Enhancement of shot noise due to the fluctuation of Coulomb interaction
Duo Li, Lei Zhang, Fuming Xu, and Jian Wang

TL;DR
This paper develops a theoretical approach using NEGF-DFT to analyze how Coulomb interaction fluctuations influence shot noise in atomic junctions, revealing super-Poissonian noise behavior in NDR regions.
Contribution
The authors introduce a formalism to incorporate Coulomb interaction fluctuations into shot noise calculations within NEGF-DFT, highlighting their impact on noise characteristics.
Findings
Coulomb interaction fluctuations increase the Fano factor above 1 in NDR regions.
The formalism predicts super-Poissonian shot noise due to Coulomb fluctuations.
First-principles calculations show NDR behavior in atomic carbon wire junctions.
Abstract
We have developed a theoretical formalism to investigate the contribution of fluctuation of Coulomb interaction to the shot noise based on Keldysh non-equilibrium Green's function method. We have applied our theory to study the behavior of dc shot noise of atomic junctions using the method of nonequilibrium Green's function combined with the density functional theory (NEGF-DFT). In particular, for atomic carbon wire consisting 4 carbon atoms in contact with two Al(100) electrodes, first principles calculation within NEGF-DFT formalism shows a negative differential resistance (NDR) region in I-V curve at finite bias due to the effective band bottom of the Al lead. We have calculated the shot noise spectrum using the conventional gauge invariant transport theory with Coulomb interaction considered explicitly on the Hartree level along with exchange and correlation effect. Although the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsMolecular Junctions and Nanostructures · Surface and Thin Film Phenomena · Semiconductor materials and interfaces
