Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes

TL;DR

This paper presents an analytic compact model for large-area double-gate graphene FETs, incorporating electrostatics and two drain current saturation modes, advancing understanding of device operation.

Contribution

It introduces a unified phenomenological approach to model the two saturation modes in double-gate graphene FETs based on diffusion-drift approximation.

Findings

Model accurately describes electrostatics of double-gate structure

Unified approach captures two drain current saturation modes

Analytic model facilitates device design and analysis

Abstract

Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.