High-pressure study of superconducting and non-superconducting single crystals of the same nominal composition Rb0.8Fe2Se2
M. Gooch (1), B. Lv (1), L. Z. Deng (1, 2), T. Muramatsu (1), J., Meen (1, 3), Y. Y. Xue (1, 2), B. Lorenz (1, 2), and C. W. Chu (1, and 2, 4) ((1) TCSUH, University of Houston, Houston, Texas, USA, (2), Department of Physics, University of Houston, Houston, Texas, USA, (3)
TL;DR
This study compares two Rb0.8Fe2Se2 single crystals prepared similarly but exhibiting different electronic states, revealing how pressure influences their superconducting and semiconducting behaviors.
Contribution
It demonstrates that identical nominal compositions can lead to different electronic phases, emphasizing the role of preparation routes and pressure effects on superconductivity.
Findings
One sample is superconducting with Tc ~31 K.
The other sample is a narrow-gap semiconductor.
High pressure affects doping and electronic properties.
Abstract
Two single crystalline samples with the same nominal composition of Rb0.8Fe2Se2 prepared via slightly different precursor routes under the same thermal processing conditions were investigated at ambient and high pressures. One sample was found superconducting with a Tc of ~31 K without the previously reported resistivity-hump and the other was unexpectedly found to be a narrow-gap semiconductor. While the high pressure data can be understood in terms of pressure-induced variation in doping, the detailed doping effect on superconductivity is yet to be determined.
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