On the Quantum Hall Effect in graphene
M. V. Cheremisin
TL;DR
This paper analyzes the quantum Hall effect in graphene, showing that resistivities depend universally on filling factor and temperature, and solves the magneto-transport problem near the Dirac point at fixed magnetic field.
Contribution
It provides a detailed analysis of quantum Hall effect in graphene, including universal resistivity functions and solutions near the Dirac point, advancing understanding of graphene's magneto-transport properties.
Findings
Resistivities are universal functions of filling factor and temperature.
Magneto-transport problem is solved near the Dirac point at fixed magnetic field.
Provides insights into quantum Hall effect in graphene.
Abstract
Quantum Hall effect in 1,2-layer graphene is analyzed. The transverse and longitudinal resistivity are found to be universal functions of the filling factor and temperature. At fixed magnetic field mode the magneto-transport problem is resolved in the vicinity of the Dirac point.
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