Broadband terahertz pulse emission from ZnGeP_2
J. D. Rowley, J. K. Pierce, A. T. Brant, L. E. Halliburton, N. C., Giles, P. G. Schunemann, and A. D. Bristow

TL;DR
This paper demonstrates broadband terahertz pulse generation via optical rectification in (110)-cut ZnGeP2, showing it outperforms GaP and GaAs in field amplitude due to its nonlinear properties, suitable for infrared excitation.
Contribution
It introduces ZnGeP2 as an effective material for broadband THz generation and compares its performance to GaP and GaAs across various wavelengths and intensities.
Findings
ZGP produces larger THz fields than GaP and GaAs.
ZGP is effective over a wide infrared wavelength range.
Lower nonlinear absorption or higher nonlinearity enhances ZGP performance.
Abstract
Optical rectification is demonstrated in (110)-cut ZnGeP_2 (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak intensity range of 0.5 GW/cm^2 to 40 GW/cm^2. ZGP peak-to-peak field amplitude is larger than in the other materials due to either lower nonlinear absorption or larger second order nonlinearity. This material is well suited for broadband THz generation across a wide range of infrared excitation wavelengths.
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