Cross talk by extensive domain wall motion in arrays of ferroelectric nanocapacitors

TL;DR

This study investigates how domain walls in ferroelectric nanocapacitor arrays move extensively under high bias, causing cross-talk that impacts the reliability of nanoscale ferroelectric memory devices.

Contribution

It reveals the mechanisms of domain wall propagation and cross-talk in ferroelectric nanocapacitors under extreme bias conditions, combining experimental and simulation insights.

Findings

Domain walls propagate into neighboring capacitors under high bias.

Cross-talk paths are consistent across repeated tests.

Capacitor parameters and defects influence cross-talk behavior.

Abstract

We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls start to propagate into the neighbouring capacitors initiating a significant cross-talk. The propagation paths and the propagated area into the neighbouring capacitors were always the same under repeated runs. The experimental and the simulated results show that the observed cross-talk is related to the capacitor parameters combined with local defects. The results can be helpful to test the reliability of nanoscale ferroelectric memory devices.