Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
Nicolas Reckinger, Xiaohui Tang Vincent Bayot, Dmitri A. Yarekha,, Emmanuel Dubois, Sylvie Godey, Xavier Wallart, Guilhem Larrieu, Adam Laszcz,, Jacek Ratajczak, Pascal J. Jacques, and Jean-Pierre Raskin
TL;DR
This study investigates how thermal annealing affects the Schottky barrier height of Er silicide contacts on n-type silicon, revealing a significant reduction linked to the formation of crystalline ErSi2-x.
Contribution
It demonstrates the correlation between annealing temperature, crystalline ErSi2-x formation, and Schottky barrier lowering in Er silicide/n-Si contacts.
Findings
SBH drops from 0.43 eV to 0.28 eV at 450°C
Crystalline ErSi2-x formation correlates with SBH reduction
Structural analysis confirms phase evolution during annealing
Abstract
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.
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