Erbium Silicide Growth in the Presence of Residual Oxygen

TL;DR

This study investigates how residual oxygen affects the formation and quality of Erbium silicide on silicon during thermal annealing, demonstrating that oxygen contamination leads to surface oxidation but does not impair the formation of oxygen-free silicide in contact with silicon.

Contribution

It reveals the impact of residual oxygen on Erbium silicide growth and demonstrates process optimization for oxygen-free silicide formation.

Findings

Residual oxygen causes surface oxidation of Er films.

Oxygen-free Er silicide forms in contact with silicon even with oxygen contamination.

Optimized process yields stripped oxygen-free Er silicide.

Abstract

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300{\deg}C, and annealed at 600{\deg}C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300{\deg}C and crystalline at 600{\deg}C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600{\deg}C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.