Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices

TL;DR

This paper discusses capacitance-based methods for extracting interface trap densities in graphene FETs and compares these procedures with silicon devices, highlighting their interrelation with Fermi velocity measurements.

Contribution

It introduces a capacitance measurement approach for interface trap density extraction in graphene FETs and compares it with silicon device methods, emphasizing their similarities and differences.

Findings

Capacitance methods enable trap density extraction in graphene FETs.

Interface trap extraction procedures differ between graphene and silicon devices.

The interrelation between trap density and Fermi velocity in graphene is established.

Abstract

Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.