CoB/Ni-Based Multilayer Nanowire with High-Speed Domain Wall Motion under Low Current Control

TL;DR

This study demonstrates high-speed domain wall motion in a CoB/Ni multilayer nanowire driven by low current densities, highlighting potential for low-power spintronic devices.

Contribution

It reports the first indirect observation of high-velocity domain wall motion in CoB/Ni nanowires at low current densities, with insights into material modifications improving performance.

Findings

Domain walls reach 85 m/s at zero field and low current density.

Velocity increases to 197 m/s at higher current density before decreasing.

Adding B reduces magnetization, damping, and pinning, enhancing device applicability.

Abstract

The spin-transfer torque motion of magnetic domain walls (DWs) in a CoB/Ni-based nanowire driven by a low current density of (1.12\pm0.8)\times10^{11} A m^{-2} has been observed indirectly by magnetotransport measurements. A high DW velocity of 85\pm4 m/s at zero field was measured at the threshold current density. Upon increasing the current density to 2.6\times10^{11} A m^{-2}, the DW velocity increases to 197\pm16 m/s before decreasing quickly in the high-current-density regime attributed to nonadiabatic spin-transfer torque at a low damping factor and weak pinning. The addition of B atoms to the Co layers decreased the magnitude of saturation magnetization, Gilbert damping factor, and density of pinning sites, making the CoB/Ni multilayer nanowire favorable for practical applications.