Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency

TL;DR

This paper introduces a novel method using time-resolved second harmonic generation and soliton-induced transparency to study ultrafast carrier dynamics at buried semiconductor heterointerfaces.

Contribution

It presents a new mechanism for self-induced transparency in narrow bandgap semiconductors based on dual-frequency electro-optic soliton propagation.

Findings

Discovered a new transparency mechanism in narrow bandgap semiconductors.

Enabled ultrafast carrier dynamics measurement at buried interfaces.

Demonstrated simultaneous measurement of SHG and reflectivity signals.

Abstract

The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied.