Investigation of 3D Patterns on EUV Masks by Means of Scatterometry and Comparison to Numerical Simulations
S. Burger, L. Zschiedrich, J. Pomplun, F. Schmidt, A. Kato, C. Laubis,, F. Scholze
TL;DR
This paper investigates 3D pattern structures on EUV masks using scatterometry and numerical simulations to accurately determine mask geometry, enhancing understanding of EUV lithography mask characterization.
Contribution
It introduces a method combining EUV scatterometry with rigorous Maxwell simulations to precisely analyze 3D mask geometries.
Findings
Successful correlation between experimental and simulated scatterometry data
Accurate determination of mask geometry parameters
Validation of simulation approach for EUV mask analysis
Abstract
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental results and numerical results for varied geometrical input parameters for the simulations.
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