Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method

TL;DR

This study investigates how temperature influences spin diffusion length in highly-doped silicon using a non-local 3-terminal method, revealing that spin transport remains relatively unaffected by temperature variations and external electric fields.

Contribution

It provides experimental evidence that spin diffusion length in highly-doped silicon shows weak temperature dependence when measured with a non-local 3-terminal technique.

Findings

Spin diffusion length in highly-doped Si is weakly dependent on temperature.

Spin transport is less affected by external electric fields in the studied conditions.

The non-local 3-terminal method effectively isolates spin transport properties.

Abstract

We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and temperature-dependence of spin signals in non-metallic systems except for the case of a non-local 4-terminal method, it is not fully conclusive how the spin drift affects spin transport properties in highly-doped Si in a non-local 3-terminal method that is often used in Si spintronics. Here, we report on temperature dependence of spin diffusion length in the Si, and it is clarified that the spin transport is less affected by an external electric field.