The critical temperature regions in resistive switching

TL;DR

This study identifies temperature-dependent regions where resistive switching occurs in HfAlO memory, revealing that thermal effects and charge trapping govern switching behavior across a wide temperature range.

Contribution

It uncovers the critical temperature regions for resistive switching in HfAlO and proposes a thermal-assisted percolation model involving charge trapping mechanisms.

Findings

Resistive switching occurs at 60 K and above 150 K.

Switching behavior is governed by thermal-assisted percolating conductive paths.

Charge trapping/de-trapping dominates the switching process.

Abstract

Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is observed at above 150 K. It is suggested that the resistive switching characteristics of the binary transitional metal oxides are governed by thermal assisted percolating conductive paths. The process of charge trap/de-trapping under the external electrical field plays a dominated role with the assumption of the same Joule heating generated by internal conductive filament at different temperatures.