Ionization cross sections for low energy electron transport
Hee Seo, Maria Grazia Pia, Paolo Saracco, Chan Hyeong Kim

TL;DR
This paper implements and validates two models for calculating ionization cross sections for low energy electrons, enhancing Geant4's simulation accuracy below 1 keV, with the Deutsch-Maerk model showing superior performance.
Contribution
Introduction of Binary-Encounter-Bethe and Deutsch-Maerk models into Geant4 for improved low energy electron ionization simulation.
Findings
Deutsch-Maerk model most accurately reproduces experimental data
Models extend Geant4 capabilities below 1 keV
Validation against experimental and database data conducted
Abstract
Two models for the calculation of ionization cross sections by electron impact on atoms, the Binary-Encouter-Bethe and the Deutsch-Maerk models, have been implemented; they are intended to extend and improve Geant4 simulation capabilities in the energy range below 1 keV. The physics features of the implementation of the models are described, and their differences with respect to the original formulations are discussed. Results of the verification with respect to the original theoretical sources and of extensive validation with respect to experimental data are reported. The validation process also concerns the ionization cross sections included in the Evaluated Electron Data Library used by Geant4 for low energy electron transport. Among the three cross section options, the Deutsch-Maerk model is identified as the most accurate at reproducing experimental data over the energy range…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
