Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor

TL;DR

This paper discusses the development of organic-based giant magnetoresistance (GMR) materials, highlighting their potential for magnetic sensors and other applications, and addressing limitations of traditional metal and semiconductor spacers.

Contribution

The paper introduces a novel organic GMR material using OLED-derived organic layers as spacers in spin-valve structures, offering potential advantages over traditional materials.

Findings

Organic GMR materials have been successfully developed.

Organic spacers can reduce spin scattering issues.

Potential applications include magnetic sensors and data storage.

Abstract

Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material that we have developed.