A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

TL;DR

This paper introduces a novel transfer method for graphene on hexagonal boron nitride, achieving record high mobilities and high-quality electronic properties, making advanced graphene devices more accessible.

Contribution

A new, simple, and fast transfer technique for graphene on boron nitride that produces atomically flat, bubble-free interfaces with high mobility.

Findings

Achieved mobilities up to 125,000 cm^2/V/s at room temperature.

Observed early quantum Hall plateau at 5 T and 4.2 K.

Demonstrated high-quality graphene devices using commercial boron nitride.

Abstract

We present electronic transport measurements of single- and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm^2/V/s at 4.2 K. The excellent quality is supported by the early development of the nu = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4.2 K. We also present a new and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique is simple, fast and yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.