Graphene Bilayer Structures with Superfluid Magnetoexcitons

TL;DR

This paper investigates the conditions under which superfluid magnetoexcitons can form in graphene bilayer structures, analyzing parameters like magnetic field and impurities to understand their superfluid transition.

Contribution

It introduces a detailed analysis of superfluidity in graphene bilayer magnetoexcitons, providing parameter ranges and impurity effects not previously explored.

Findings

Superfluidity occurs within specific interlayer distances and dielectric constants.

Critical temperature for superfluid transition is calculated.

Impurities reduce the critical parameters for superfluidity.

Abstract

We study superfluid behavior of a gas of spatially indirect magnetoexcitons with reference to a system of two graphene layers embedded in a multilayer dielectric structure. The system is considered as an alternative of a double quantum well in a GaAs haterostructure. We determine a range of parameters (interlayer distance, dielectric constant, magnetic field and gate voltage) where magnetoexciton superfluidity can be achieved. Temperature of superfluid transition is computed. A reduction of critical parameters caused by impurities is evaluated and critical impurity concentration is determined.