Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interaction
Thibault J.Y. Derrien, Thierry Sarnet, Marc Sentis, Tatiana, E. Itina

TL;DR
This paper introduces a numerical two-temperature model to explain the formation of periodic surface ripples on silicon caused by femtosecond laser irradiation, highlighting interference effects and energy transfer processes.
Contribution
The study develops a novel numerical model incorporating interference, free carrier dynamics, and electron-phonon coupling to elucidate ripple formation mechanisms.
Findings
Simulation results match experimental ripple patterns
Interference with surface waves influences ripple orientation
Energy relaxation processes are key to pattern development
Abstract
We consider the case of surface irradiation by a small number of femtosecond laser shots leading to the formation of surface ripples. To explain this effect, we propose a numerical model that accounts for the following processes: (i) interference of the laser irradiation with an electromagnetic surface wave propagating on a silicon sample; (ii) free carrier formation and laser energy absorption; (iii) energy relaxation and electron-phonon coupling. We perform numerical calculations taking into account the interference of a surface wave with laser; and present the obtained simulation results in order to explain formation mechanisms of the experimentally observed patterns.
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Taxonomy
TopicsLaser Material Processing Techniques · Ocular and Laser Science Research · Silicon Nanostructures and Photoluminescence
