Bilayer graphene dual-gate nanodevice: An ab initio simulation

TL;DR

This paper uses first principles calculations to analyze the electronic transport in dual-gated bilayer graphene nanodevices, revealing tunneling effects and conditions for charge neutrality.

Contribution

It provides a detailed ab initio study of how gate length and temperature affect current and charge neutrality in bilayer graphene devices.

Findings

Non-zero current persists up to 100 Å gate length under electric field.

Tunneling regime explained by remanent states in the gap.

Conditions for charge neutrality in defect-free systems discussed.

Abstract

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping.