Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

TL;DR

This study demonstrates the observation of the half-integer quantum Hall effect in large, high-quality CVD-grown graphene films, highlighting their potential for quantum resistance standards and advanced quantum Hall physics experiments.

Contribution

First demonstration of well-developed quantum Hall effect on large-scale CVD graphene films with high electronic quality.

Findings

Observation of half-integer quantum Hall effect on 7 mm x 7 mm graphene

High carrier mobility (~4000 cm^2/Vs) in transferred CVD graphene

Potential for graphene-based quantum resistance standards

Abstract

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.