Temporal universal conductance fluctuations in RuO$_2$ nanowires due to mobile defects
An-Shao Lien, L. Y. Wang, C. S. Chu, and Juhn-Jong Lin

TL;DR
This study reports the observation of temporal universal conductance fluctuations in RuO$_2$ nanowires at cryogenic temperatures, revealing insights into electron scattering by mobile defects and their characteristic time scales.
Contribution
It demonstrates the presence of TUCF in RuO$_2$ nanowires and analyzes their origin, magnitude, and relation to mobile defect dynamics, expanding understanding of mesoscopic fluctuations in metal oxide nanostructures.
Findings
TUCF observed up to 10 K temperature.
Root-mean-square fluctuations reach ~0.2 e^2/h at low T.
Fluctuations linked to mobile defect scattering.
Abstract
Temporal universal conductance fluctuations (TUCF) are observed in RuO nanowires at cryogenic temperatures. The fluctuations persist up to very high K. Their root-mean-square magnitudes increase with decreasing , reaching at K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, the TUCF as a probe for the characteristic time scales of the mobile defects (two-level systems) are discussed.
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