Temperature-dependent compressibility in graphene and two-dimensional systems
Qiuzi Li, E. H. Hwang, S. Das Sarma

TL;DR
This paper investigates how the electronic compressibility of graphene and 2D semiconductor systems varies with temperature, revealing non-monotonic behavior influenced by exchange interactions and kinetic energy effects.
Contribution
It provides the first detailed analysis of temperature-dependent compressibility in monolayer and bilayer graphene within the Hartree-Fock approximation, highlighting non-monotonic trends and specific temperature corrections.
Findings
2D systems show inverse compressibility decreasing then increasing with temperature.
Monolayer graphene's inverse compressibility always remains positive and varies oppositely.
At high temperatures, bilayer graphene's inverse compressibility approaches a smaller constant.
Abstract
We calculate the finite temperature compressibility for two-dimensional semiconductor systems, monolayer graphene, and bilayer graphene within the Hartree-Fock approximation. We find that the calculated temperature dependent compressibility including exchange energy is non-monotonic. In 2D systems at low temperatures the inverse compressibility decreases first with increasing temperature, but after reaching a minimum it increases as temperature is raised further. At high enough temperatures the negative compressibility of low density systems induced by the exchange energy becomes positive due to the dominance of the finite temperature kinetic energy. The inverse compressibility in monolayer graphene is always positive and its temperature dependence appears to be reverse of the 2D semiconductor systems, i.e., it increases first with temperature and then decreases at high temperatures.…
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