Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl

TL;DR

This study investigates the anomalous Hall effect in Co$_{2}$FeSi and Co$_{2}$FeAl Heusler compounds, showing how annealing influences their electrical properties and identifying skew scattering as the main mechanism.

Contribution

It demonstrates the impact of annealing on the crystal quality and electrical resistivity, revealing the dominant skew scattering mechanism in these compounds.

Findings

Annealing affects crystal quality and electrical resistivity.

Skew scattering is identified as the dominant AHE mechanism.

The AHE and resistivity are tunable via annealing temperature.

Abstract

The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $\rho_{xx}$ as well as the anomalous Hall resistivity $\rho_{ahe}$. Analyzing the scaling behavior of $\rho_{ahe}$ in terms of $\rho_{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.