Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles
Meg Mahat, Arup Neogi (Department of Physics, University of North, Texas)
TL;DR
This study investigates how embedding metal nanoparticles in InGaN quantum wells affects ultrafast carrier relaxation and spontaneous emission, revealing material-dependent decay times using differential transmission spectroscopy.
Contribution
It provides new insights into the influence of gold and silver nanoparticles on carrier dynamics in InGaN quantum wells, highlighting their distinct effects on emission decay times.
Findings
Au nanoparticles increase decay time
Ag nanoparticles decrease decay time
Spontaneous emission dominates above band edge
Abstract
Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates the stimulated emission for above the GaN band edge excitation energy. We observed long decay times for Au-embedded sample and short decay times for Ag-embedded sample with respect to reference sample.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics